Description: GenuineOriginalNew Old StockProcured in the USAFactory Original Mfr: Fairchild Part: FQU13N06LTU Quantity: 5 pieces SHIPPING IS FAST AND FREE IN THE USA Fairchild FQU13N06LTU N-Channel MOSFET Transistor, 11 A, 60 V, 3-Pin IPAK The gate on this device can run at a 5V Logic Level so its ideal for interfacing to Microcontrollers like the Raspberry Pi, Arduino, PIC Micro etc to drive high current loads or control motors using PWM, This listing is for a pack of 5 Transistors in an Anti Static bag Product Details QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V). The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. Category Power MOSFET Channel Mode Enhancement Channel Type N Configuration Single Dimensions 6.6 x 2.3 x 6.1mm Height 6.1mm Length 6.6mm Maximum Continuous Drain Current 11 A Maximum Drain Source Resistance 0.115 Ω Maximum Drain Source Voltage 60 V Maximum Gate Source Voltage ±20 V Maximum Operating Temperature +150 °C Maximum Power Dissipation 2.5 W Minimum Operating Temperature -55 °C Mounting Type Through Hole Number of Elements per Chip 1 Package Type IPAK Pin Count 3 Typical Gate Charge @ Vgs 4.8 nC V @ 5 Typical Input Capacitance @ Vds 270 pF V @ 25 Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 8 ns Width 2.3mm ESD Shield Protective Sealed Packaging Components will be shipped in anti static tubes or boxes/trays depending on the packaging of the chip. All Components Are Handled In Compliance With ESD Static Quality Control. Please email if you have any questions
Price: 12.95 USD
Location: Huntington Beach, California
End Time: 2025-01-10T23:59:24.000Z
Shipping Cost: 4.26 USD
Product Images
Item Specifics
Restocking Fee: No
Return shipping will be paid by: Buyer
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money back or replacement (buyer's choice)
Configuration: FQU13N06LTU
Collector-Emitter Voltage: FQU13N06LTU
Number of Elements per Chip: FQU13N06LTU
MPN: FQU13N06LTU
Item Length: FQU13N06LTU
Peak Surge Current: FQU13N06LTU
Maximum Base-Emitter Saturation Voltage: FQU13N06LTU
Maximum DC Collector Current: FQU13N06LTU
Maximum Collector-Emitter Saturation Voltage: FQU13N06LTU
Item Height: FQU13N06LTU
Number of Pins: 3
Maximum Operating Temperature: FQU13N06LTU
Item Width: FQU13N06LTU
Mounting Style: FQU13N06LTU
Minimum DC Amplifier Gain: FQU13N06LTU
Maximum Collector-Base Voltage: FQU13N06LTU
Maximum Base-Emitter Voltage: FQU13N06LTU
Package/Case: FQU13N06LTU
Transistor Category: FQU13N06LTU
Minimum Operating Temperature: FQU13N06LTU
Brand: Fairchild
Series: FQU13N06LTU
Type: FQU13N06LTU
Packaging: FQU13N06LTU
Maximum Power Dissipation: FQU13N06LTU
Maximum Operating Frequency: FQU13N06LTU
Country/Region of Manufacture: United States